Development of an electro-absorption modulated laser with integrated semiconductor optical amplifier
- Realizing both low power consumption and high optical output power of 50 Gbaud, double the current output -
March 1, 2023
- Developed the electro-absorption modulated laser (EML) “FOL13EBxCS” and began shipping samples in January
- By integrating a semiconductor optical amplifier (SOA) into the EML, achieved high optical output power of 50 Gbaud, double the current output
- By realizing both high optical output power and low power consumption, contributes to the establishment of optical communication networks that support the commercialization of 5G
Background
Details
In addition to laser sources for long haul and metro networks (for medium and long distances), we offer a lineup of laser sources for a broad range of optical networks, including data center and access networks (for short and medium distances, including this product).
| Parameter | Specification value | Units | Conditions |
| Operating temperature | 55 | ℃ | |
|---|---|---|---|
| LD operating current | <80 | mA | |
| SOA operating current | <80 | mA | |
| EAM bias voltage | -1.5-0 | V | 50Gbps, NRZ |
| Extinction ratio | >4 | dB | 50Gbps, NRZ |
| Optical output power | >12 | dBm | CW, EAM bias voltage = 0V |
| Wavelength |
Support O-band and LAN-WDM |
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Provided structure: Chip on Submount
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