Development of a new pump laser for high output power, low power consumption Raman amplifiers by expanding the range of the FRL1441U Series to support the S-band and L-band
- Start mass production from September 2023, and contribute to the realization of ultra-high speed, large volume networks -
March 2, 2023
- Support the S-band and L-band by extending the range of Furukawa Electric’s FRL1441U Series pump laser for high output power, low power consumption Raman amplifiers
- S-band focuses on high output power, low power consumption (700mW), and the L-band focuses on low power consumption (33% lower than existing Furukawa Electric products)
- Start mass production from September 2023, and supply production that can amplify the signal light source at a discretionary range including the S-band, C-band and L-band
The development of a pump laser for Raman amplifiers that support the S-band and L-band was conducted and achieved as part of the National Institute of Information and Communications Technology (NICT) commissioned research “Beyond 5G – Development of extended range optical node technology for realizing ultra-high speed, large volume networks” (Key Issue 045).
Background
We have contributed to the advancement of optical communications for over 20 years as a leading company in the manufacture of pump lasers, a key component of Raman amplifiers.
Details
Using this product, it will be possible to reduce the space required by using a single pump laser instead of the previous two pump lasers required for achieving higher output power. At the same time, the reduced power consumption will contribute to reducing the power consumption of the Raman amplifier. Also, with the expanded lineup, it will be possible to supply components for Raman amplifiers that can selectively amplify the signal light source from the S-band through the L-band, thus contributing to the realization of ultra-high speed, high volume transmission networks.
characteristics (S-band) @ 35℃ chip temperature
| Model | FRL1441U Series (Characteristics of the newly developed pump laser for the S-band and L-band) | ||
|---|---|---|---|
| Bandwidth | S-band | L-band | |
| Optical output power (mW) | 700 | 600 | 500 |
| Power consumption (W) | Max. 14 | Max. 10 | Max. 10 |
| Operating conditions | Ts=35℃, Tc=70℃(EOL) | ||
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note 1OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
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note 2InP (Indium Phosphide): A III-V compound semiconductor that is used in the manufacture of laser diode chips and high speed transistors
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