Expanded bandwidth of FRL1441U Series – pump lasers for high output, low power consumption Raman amplifiers – for U-band application
- Also succeeded in further increasing output power of the entire Series by optimizing laser chip design -
January 26, 2024
- Expansion of bandwidth of FRL1441U Series – pump lasers for high output, low power consumption Raman amplifiers – enabled U-band application, contributing to expanding transmission wavelength range
- Mass production of pump lasers for all S-, C-, L- and U-bands will start from this April
- The pump laser for the C-band achieved fiber output of 1W at 35℃, contributing to achieving lower power consumption as a result of reducing reactive power
Background
Details
Furthermore, while fiber output from the existing product for C-band is 800mW when the driving current is 4A at 35℃, this product achieved 1W as a result of optimizing the laser chip design (Fig. 1). Similarly to the existing products, this product was developed in the 14-pin butterfly package (Fig. 2), thereby reducing reactive power and contributing to further lowering power consumption. In order to offer more technical advantages to FRL1441U Series, we reduced electrical resistance of laser chip by more than 10% by optimizing the design of the chip, and developed the laser chip which enables high output power with low power consumption. On this background, it uses our optical semiconductor processing technology using InP (note 2) semiconductor materials developed over more than 25 years and high accuracy fiber coupling technology, as well as the application of our unique low loss, high efficiency semiconductor laser chip structure. It also takes advantage of the optimized design of our patented high efficiency semiconductor laser chip structure.
An oral presentation of this product will be made at Photonics West 2024 to be held in San Francisco, USA, in January of this year (on Jan. 29, 2024).
Going forward, we will continue to develop high output, low power consumption laser chip technology and contribute to accelerated reductions in module power consumption and the establishment of environmentally-friendly networks.
| Model | FRL1441U Series | |||
|---|---|---|---|---|
| Bandwidth | S-band | L-band | U-band | |
| Optical output power (mW) | 700 | 600 | 500 | |
| Power consumption (W) | Max. 14 | Max. 10 | Max. 10 | |
| Operating conditions | Ts=35℃, Tc=70℃(EOL) | |||
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note 1OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio
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note 2InP (Indium Phosphide): A III-V compound semiconductor that is used for the manufacture of laser diode chips and high speed transistors
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